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Address:Room 1505, Building 9, No. 26 Dongqing Street, Zhengzhou High-tech Industrial Development Zone
Tel Number
180-3717-8440
Introduction
The KJ-TG1100-S215CK3W is a high-capacity, horizontal dual-chamber tube annealing furnace purpose-built for semiconductor wafer thermal processing. A large-diameter fused-quartz tube (ID 203 mm, OD 215 mm, approx. 1600 mm long) passes through two independently heated furnace chambers with a total heated length of 900 mm across three temperature zones. The system reaches a design temperature of 1200 °C and operates continuously at 1100 °C, under either vacuum or a controlled inert-gas atmosphere.
The furnace is delivered as a fully integrated, mobile cabinet: it combines an alumina-fiber hot zone, a double-walled steel shell with forced air cooling, motorized split doors, a high-purity gas delivery train, an oil-free scroll vacuum pump, pneumatic isolation valves, and a 7-inch touch-screen controller. Compact, clean, and safety-enclosed, it is engineered for wafer annealing, dopant activation, and thin-film heat treatment in R&D labs, pilot lines, and small-batch production.
Applications
1. Semiconductor wafer annealing — post-implant and post-process anneal on Si, SiC, and GaN substrates
2. Dopant activation and drive-in — controlled high-temperature soak under inert atmosphere
3. Thermal oxidation and diffusion — controlled-atmosphere wafer heat treatment
4. Thin-film stress relief and crystallization — dielectric, metal, and compound-semiconductor films
5. MEMS and compound-semiconductor processing — device fabrication and material characterization
6. Crystal growth and advanced materials research — academic and industrial R&D
7. Pilot lines and compact foundry tools — small-volume, high-uniformity thermal processing
The KJ-TG1100-S215CK3W is a high-capacity, horizontal dual-chamber tube annealing furnace purpose-built for semiconductor wafer thermal processing. A large-diameter fused-quartz tube (ID 203 mm, OD 215 mm, approx. 1600 mm long) passes through two independently heated furnace chambers with a total heated length of 900 mm across three temperature zones. The system reaches a design temperature of 1200 °C and operates continuously at 1100 °C, under either vacuum or a controlled inert-gas atmosphere.
The furnace is delivered as a fully integrated, mobile cabinet: it combines an alumina-fiber hot zone, a double-walled steel shell with forced air cooling, motorized split doors, a high-purity gas delivery train, an oil-free scroll vacuum pump, pneumatic isolation valves, and a 7-inch touch-screen controller. Compact, clean, and safety-enclosed, it is engineered for wafer annealing, dopant activation, and thin-film heat treatment in R&D labs, pilot lines, and small-batch production.
Applications
1. Semiconductor wafer annealing — post-implant and post-process anneal on Si, SiC, and GaN substrates
2. Dopant activation and drive-in — controlled high-temperature soak under inert atmosphere
3. Thermal oxidation and diffusion — controlled-atmosphere wafer heat treatment
4. Thin-film stress relief and crystallization — dielectric, metal, and compound-semiconductor films
5. MEMS and compound-semiconductor processing — device fabrication and material characterization
6. Crystal growth and advanced materials research — academic and industrial R&D
7. Pilot lines and compact foundry tools — small-volume, high-uniformity thermal processing
