Kejia 1200℃ PECVD Tube Furnace Systems

1200℃ PECVD System

Description：

The PECVD system uses radio frequency to ionize the gas containing the atoms constituting the film to form a plasma locally, and the plasma is chemically active and easily reacts to deposit the desired film on the substrate.

product description:
The PECVD system uses radio frequency to ionize the gas containing the atoms constituting the film to form a plasma locally, and the plasma is chemically active and easily reacts to deposit the desired film on the substrate.

Product Usage:
Wide temperature range; long sputtering area; adjustable tube; exquisite and compact, cost-effective, can achieve rapid temperature rise and fall, is an ideal choice for laboratory growth of thin film graphene, metal thin film, ceramic thin film, composite thin film, etc. Extended plasma clean etch use.

Product Specification:

Model		KJ-PECVD-1200-50*300-F3
Heating system	Display	LED
	Limit Temperature	1200℃
	Continuous Working Temp.	≤1100℃
	Heating Rate	Suggestion: 0~15℃/min (max. 20℃/min)
	Temperature Zone	300mm Customizable
	Heating Element	Resistance with Mo
	Thermocouple	N type
	Temperature Control Accuracy	±1℃
	Tube Size	60 x 1200mm Customizable
	Tube Size	Material: alumina
	Temperature Control	PID automatic control via SCR power control
	Heating process	30 steps programmable
	Max working pressure	0.02MPa
Vacuum System	Rotary vane pump Include KF25 Adpater, bellow for vacuum pump group and mobile cabinet with wheels.	Ultimate vacuum 10Pa under cold state.
	Vacuum gauge	Inficon digital vacuum gauge
	Vacuum Flange	Stainless Steel vacuum flange with valves and needles
Mass Flow meters	Flow scope	CO2 (flow range: 0-200 sccm CH4 (flow range: 0-200 sccm) N2 the flow range (flow range: 0-200 sccm)
	Accuracy	±1.5 % F.S.
	Repeat accuracy	±1.5 % F.S.
	Response time	≦10sec
	Working pressure difference range	0.1~0.5MPa
	Pressure resistance	3MPa
	Temperature Coefficient	Zero: ≤±0.2% F.S./℃; Span: ≤±0.2% F.S./℃
	Working environment temperature	5~45℃
	Input signal	0 V ~ +5.00 V
	Output signal	0 V ~ +5.00 V
	Electric plug form	DB15 pin（Female）
	Power	+15 V 50 mA -15V 200 mA
Plasma RF Generator	Output Power: 0 -300W adjustable with ± 1% stability RF frequency: 13.56 MHz ±0.005% stability Reflection Power: 120W max. Power stability index: ± 0.1% Matching: Automatic Noise: <50 dB. Whole efficiency:≧70%