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Address:Room 1505, Building 9, No. 26 Dongqing Street, Zhengzhou High-tech Industrial Development Zone
Tel Number
180-3717-8440
Introduction:
KJ-T1200-PECVD PECVD is a is PE-CVD (Plasma Enhanced Chemical Vapor Deposition) tube furnace system which consists of with Pre-Heater and 500W RF power supply, O.D 60mm optional split tube furnace, 4 channels precision mass flow meter with gas mixing tank, and high-quality vacuum pump. The PE-CVD furnace is an ideal and affordable tool to deposit thin films or grow nanowire from a gas state (vapor) to a solid-state, PECVD is an important technology in the field of graphene and can be used to prepare high-quality graphene films and nanostructures.
PECVD with Load Lock System is used for execution of plasma enhanced chemical vapor deposition procedure in semiconductor arena. Utilization of this system can also be noticed in microelectronics arena. Vacuum loadlock of this system has significant role in the production of low stress films.
Characteristics:
Equipped with a pre-heating furnace at the front end, auxiliary solid state source evaporation, and a single temperature zone heating furnace at the back end, temperature control is accurate, easy to operate, and suitable for vapor deposition, two-dimensional materials, and plasma treatment growth processes
KJ-T1200-PECVD PECVD is a is PE-CVD (Plasma Enhanced Chemical Vapor Deposition) tube furnace system which consists of with Pre-Heater and 500W RF power supply, O.D 60mm optional split tube furnace, 4 channels precision mass flow meter with gas mixing tank, and high-quality vacuum pump. The PE-CVD furnace is an ideal and affordable tool to deposit thin films or grow nanowire from a gas state (vapor) to a solid-state, PECVD is an important technology in the field of graphene and can be used to prepare high-quality graphene films and nanostructures.
PECVD with Load Lock System is used for execution of plasma enhanced chemical vapor deposition procedure in semiconductor arena. Utilization of this system can also be noticed in microelectronics arena. Vacuum loadlock of this system has significant role in the production of low stress films.
Equipped with a pre-heating furnace at the front end, auxiliary solid state source evaporation, and a single temperature zone heating furnace at the back end, temperature control is accurate, easy to operate, and suitable for vapor deposition, two-dimensional materials, and plasma treatment growth processes
- Lower temperature processing compared to conventional CVD: PECVD can deposit materials at lower temperatures than traditional CVD, which can be beneficial for substrates that are sensitive to high temperatures.
- Film stress can be controlled by high/low frequency mixing techniques: The stress within the deposited film can be controlled by adjusting the frequency of the plasma, allowing for more precise control over the film's properties.
- Control over stoichiometry via process conditions: The chemical composition (stoichiometry) of the deposited film can be precisely controlled by adjusting the process parameters, such as gas flow rates and plasma power.
- Offers a wide range of material deposition, including SiOx, SiNx, SiOxNy and Amorphous silicon (a-Si:H) deposition: PECVD is a versatile technique that can be used to deposit a variety of materials, including silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy), and amorphous silicon (a-Si:H). These materials are commonly used in semiconductor and thin-film technology.
| Model | KJ-T1200-PECVD | ||
| Part I: Standard Parts----Pre-heating furnace | |||
| Pre-heating furnace (LCD) | Max Temp | 1200C | |
| Working Temp. | <= 1100C | ||
| Hot zone | OD60mm*200mm heating zone | ||
| Part II : Standard Parts---RF Power | |||
| Plasma RF Power Supply |
Output Power | 5 -500W adjustable with ± 1% stability | |
| RF frequency | 13.56 MHz ±0.005% stability | ||
| Reflection Power | 200W max. | ||
| Matching | Automatic | ||
| RF Output Port | 50 Ω, N-type, female | ||
| Noise | <50 dB. | ||
| Cooling | Air cooling. | ||
| Tube Size | 50 - 80 mm (2''-3.14'' OD) | ||
|
Part III : Standard Parts----Tube Furnace |
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| Tube Furnace |
Chamber | Split type and upper part can be opened | |
| Max. Temp. | 1200℃ for short time | ||
| Continuous Woking Temp. | ≤1100℃ | ||
| Heating Rate | Suggestion: 0~10℃/min (max. 20℃/min) |
||
| Heating Zone | 300mm | ||
| Heating Element | Fe-Cr-Al Alloy doped by Mo | ||
| Thermocouple | N type | ||
| Temperature Control Accuracy | ±1℃ | ||
| Tube Size | 60mm OD X Length 1500 mm | ||
| Material: Quarz Tube |
|||
| Temperature Control | PID automatic control via SCR power control | ||
| Heating curves | 30 steps programmable | ||
| Vacuum Flange | Stainless Steel vacuum flange with valve | ||
| Part IV : Standard Parts---vacuum pump | |||
| Vacuum Pump System |
Diffusion pump system Pumping rate:1000L/S Compsite digital vacuum gauge The rotary vane vacuum pump will be designed into a cart with wheel. |
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| Part V: Standard Parts----Gsa system | |||
| Mass Flow Meters LCD Touch Screen |
Four precision mass flow meters : MFC1：0~100 sccm: H2 (Hydrogen) MFC2：0~200 sccm: O2 (Oxygen) MFC3：0~200 sccm: N2 (Nitrogen) MFC4：0~500 sccm: He (Helium) One gas mixing tank is installed on bottom case with 4 stainless steel needle valves is installed on left side of bottom case to control 4 type gases mixing manually |
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| Water ChilLer | Used for Diffusion pump. | ||
