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Plasma Enhanced Chemical Vapor Deposition (PE-CVD) System
Plasma Enhanced Chemical Vapor Deposition (PE-CVD) System

Plasma Enhanced Chemical Vapor Deposition (PE-CVD) System



KJ-T1200-S6030-PE Plasma Enhanced Chemical Vapor Deposition (PE-CVD) System consists of a 60mm-daimeter railway tube furnace, a three-channel gas-mixing unit with mass flow meters, a vacuum pump unit and a RF plasma source.

Specific Introduction:
    This device is equipped with RF plasma source for plasma enhancement. The slide-type design enable you to move the constant high temperature required by the experiment to the samples during operation, so that the sample can get a rapid heating rate, and the high-temperature tube furnace can also be directly pushed away from the sample and the sample will be exposed in the  room temperature for a fast cooling rate. The regulating valve is very simple and practical for low-pressure CVD. It has good process repeatability and is suitable for graphene growth process and CVD experiment requiring rapid temperature rise and fall.

Range of Application:
    This PECVD system is mainly used in universities and research institutes for vacuum coating, nano-film material preparation, growth of thin film graphene, metal film, ceramic film, composite film, etc., and can also be used for plasma cleaning and etching.


Product name

Plasma Enhanced Chemical Vapor Deposition (PE-CVD) System



Tube Furnace


Railway type


Max. Temperature



Working Temperature



Heating Rate

20℃/min (Suggestion 10℃/min)


Heating Zone Length

300mm (Single Zone)


Heating Element

0Cr27Al7Mo2 resistance wire


Temperature Sensor

K-type thermocouple


Temperature Control Accuracy




Quartz tube

Φ50, 60, 80mm available


Temperature Controller

PID automatic control with 30 programmable segments for precise control



Flanges made of 304SS

Gas valve on left flange

Vacuum angle valve with KF25 connector on the right flange

Note: Standard flange, KF flange and hinge flange are available.


Power Supply

Single phase, 220V, 50Hz.



Power 3kW

Vacuum pump unit

Vacuum pump

(With movable box)

Imported vacuum pump


(Better vacuum degree 0.001pa can be achieved with a mechanical vacuum pump and a diffusion vacuum pump.)


Pressure Gauge

Digital Pressure Gauge with high accuracy

Plasma RF Power Supply

Output Power Range

5-300W Adjustable

200w/300w/500w/1000w available.


RF frequency

13.56 MHz ±0.005% stability


Reflection Power

200W max





RF Output Port

50 Ω, N-type, female



 <50 dB






208-240VAC, Single Phase, 50/60Hz

Gas-Mixing Unit with mass flow meters

Three precise mass flow meters (0.02% accuracy) with LED displays are installed on the front panel to control gas flow rate manually.

One gas mixing tank is installed on the bottom case.

MFC 1: Gas flow range from 0~100 SCCM

MFC 2: Control range from 0~200 SCCM  

MFC 3: Control range from 0~500 SCCM

Gas inlet fitting: four 1/4NPS.

Gas outlet fitting: four 1/4NPS.

Power: 185-220VAC 50/60Hz

4 stainless steel needle valves are installed on the left side to manually control the inlet and outlet of gas.

Chiller (Optional)

Be used to cool the tube and vacuum pump.


Pressure higher than 1.02Mpa will break the tube.

Since the pressure in the gas cylinder is high, a converter is necessary. The measurement range of our converter is 0.01mpa-0.1mpa, will ensure a safe gas supply.

No vacuum condition is allowed when the temperature is higher than 1000℃.

Please keep the gas flow lower than 200sccm when the temperature is high to lower the impact of cold air to the hot tube.

If you have to keep the valves on the two ends of the tube closed at the same time, please watch the pressure gauge and open the valves once the pressure is higher than 1.02Mpa to avoid any tube breakage.


One year with lifetime technical support.

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